Welcome to Extended Education

Physics and Technology of Advanced MOSFETs - Today and the Future

Submitted by sputtagu on Tue, 2010-10-19 16:30
Program Summary
Program Length: 
2 days
Program Dates: 
Available as a custom offering, by company request
Location: 
Arizona State University

Course Description

This course, a condensed version of an advanced MOSFET graduate course taught by D.K. Schroder at Arizona State University, covers most of the important physics and technology issues of today's advanced MOSFETs and discusses considerations for future devices and technologies.

The objective of this course is to provide a good overview of today's and tomorrow's MOS devices. It covers topics often not discussed in device physics courses, such as quantum effects/poly-Si depletion, subthreshold behavior, drain-induced barrier lowering (DIBL), gate-induced drain leakage (GIDL), short-channel effects, high-K and low-K dielectric issues, Cu interconnects, gate oxide leakage current, silicon-on-insulator and silicon-germanium issues as well as new device structures.

Course Instructors

Dieter K. Schroder, Professor of Electrical Engineering at Arizona State University (ASU), has worked with semiconductor materials and devices since 1968 at Westinghouse R&D Labs and ASU. He is the author of the books Advanced OS Devices and Semiconductor Material and Device Characterization as well as many papers on semiconductors. He is a Life Fellow of IEEE.

Learning and Knowledge Outcomes

 

Review of Basic MOSFET Theory

  • Threshold Voltage

  • Current - Voltage

Deep Submicron MOSFETs

  • Mobility

  • Velocity Saturation

  • Series Resistance

  • Quantum Effects

  • Poly-Si Gate Depletion

  • Channel Length Modulation

  • Subthreshold Effects/Problems

  • Scaling

Short Channel Effects

  • Charge Sharing

  • VT Roll Off

  • Drain Induced Barrier Lowering

  • Channel Doping

  • Latchup

Hot Carriers

  • MOSFET Degradation

  • Substrate Current

  • MOSFET Lifetime

  • LDD and Hot Carrier Suppression

  • Gate Induced Drain Leakage Current

Electrostatic Discharge

  • Discharge Models

Gate Dielectric Issues

  • Gate Oxide Thickness Measurement

  • Tunneling Current

  • Reliability

  • High-K Dielectrics

Interconnects

  • Low-K Dielectrics

  • Copper versus Aluminum

  • Electromigration

Silicon-on-Insulator

  • SOI versus Bulk

  • Partial/Full Depletion

  • Floating Body Effects

Silicon-Germanium

  • Band Gap Offsets

  • Strained Layers

  • Mobility

Novel Device Structures

  • Double Gate MOSFETs

  • FinFETs

Who Should Attend

This course is intended for semiconductor engineers (device engineers, circuit engineers, process engineers and product engineers) with a basic understanding of semiconductor devices but want a deeper understanding of advanced MOSFET concepts.

For more information contact:


Layla Reitmeier
Coordinator-Professional and Executive Programs
layla@asu.edu
480-965-8515